INTERSYNAPSES
physical properties of the INTERmediate states of the multilevel phase change memories for artificial SYNAPSES
Research project selected under the 2020 call for proposals
Principal Investigator : Lionel CALMELS
Involved Teams :
- CEMES / MEM
- LPCNO / NANOTECH
- CEMES / SINANO
Type of project : Collaborative Project
Date (start/end) : 2020 – 2023
This project aims at understanding the origin and controlling the physical properties of the
intermediate states of resistivity found in phase-change memory devices using Ge-rich Ge-Sb-Te phase change materials. Such devices could be the building blocks of future beyond-von Neumann and brain-inspired computing architectures, in particular artificial synapses. Advanced experimental investigations at the nanoscale, transport measurements and numerical modelling/simulations will be coupled in this project to establish the link between the structural and chemical characteristics of the material and the electrical properties of devices showing these intermediate states after electrical activation.